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1546-2080 Online :: 1546-203X Print
Comparative Approaches for Silicon Nanowire Electronics
Volume 5, Issue 4


Authors:
Blaise Mouttet, George Mason University

Abstract:
For the past 60 years silicon has been the dominant material for the semiconductor industry. While a variety of other materials such as carbon nanotubes may one day come to rival silicon, it is likely that near term applications of nanomaterials for semiconductor devices will continue to use silicon as the primary building block. The present article examines three different approaches being developed to incorporate silicon nanowires into semiconductor device architectures in view of the patent landscape for silicon nanowires. The first approach, developed by Infineon Technologies, involves the catalytic growth of silicon nanowires to serve as the channel of vertical nano-MOSFETs. The second approach, developed by Hewlett-Packard, involves the formation of well ordered nanowire crossbars using nanoimprint lithography fabrication methods. The third approach, developed by Nanosys, involves patterning of prefabrication silicon nanowires onto a substrate by printing-based deposition techniques. The advantages and disadvantages of each approach is analyzed and the key U.S. patents are identified.

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